? semiconductor components industries, llc, 2001 march, 2001 rev. 5 1 publication order number: mmbz5v6alt1/d mmbz5v6alt1 series preferred devices 24 and 40 watt peak power zener transient voltage suppressors sot23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sot23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? working peak reverse voltage range 3 v to 26 v ? standard zener breakdown voltage range 5.6 v to 33 v ? peak power 24 or 40 watts @ 1.0 ms (unidirectional), per figure 5. waveform ? esd rating of class n (exceeding 16 kv) per the human body model ? maximum clamping voltage @ peak pulse current ? low leakage < 5.0 m a ? flammability rating ul 94vo mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds package designed for optimal automated board assembly small package size for high density applications available in 8 mm tape and reel use the device number to order the 7 inch/3,000 unit reel. replace the at1o with at3o in the device number to order the 13 inch/10,000 unit reel. preferred devices are recommended choices for future use and best overall value. sot23 case 318 style 12 http://onsemi.com 1 3 2 1 2 3 pin 1. cathode 2. cathode 3. anode device package shipping ordering information mmbz5v6alt1 sot23 3000/tape & reel mmbz6v2alt1 sot23 3000/tape & reel mmbz6v8alt1 sot23 3000/tape & reel mmbz10valt1 sot23 3000/tape & reel xxx mmbz12valt1 sot23 3000/tape & reel mmbz15valt1 sot23 3000/tape & reel mmbz18valt1 sot23 3000/tape & reel mmbz20valt1 sot23 3000/tape & reel mmbz27valt1 sot23 3000/tape & reel mmbz33valt1 sot23 3000/tape & reel marking diagram xxx = device code m = date code m see specific marking information in the device marking column of the table on page 3 of this data sheet. device marking information mmbz9v1alt1 sot23 3000/tape & reel
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f mmbz5v6alt1 series http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1.) mmbz5v6alt1 thru mmbz10valt1 @ t l 25 c mmbz12valt1 thru mmbz33valt1 p pk 24 40 watts total power dissipation on fr5 board (note 2.) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r q ja 556 c/w total power dissipation on alumina substrate (note 3.) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r q ja 417 c/w junction and storage temperature range t j , t stg 55 to +150 c lead solder temperature maximum (10 second duration) t l 260 c 1. nonrepetitive current pulse per figure 5. and derate above t a = 25 c per figure 6. 2. fr5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *other voltages may be available upon request electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk
mmbz5v6alt1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) 24 watts i r @ breakdown voltage max zener impedance (note 5.) v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t z zt @ i zt z zk @ i zk v c i pp v br device device marking volts a min nom max ma w w ma v a mv/ c mmbz5v6alt1 5a6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 mmbz6v2alt1 6a2 3.0 0.5 5.89 6.2 6.51 1.0 8.7 2.76 2.80 (v f = 1.1 v max @ i f = 200 ma) breakdown voltage v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts a min nom max ma v a mv/ c mmbz6v8alt1 6a8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4 mmbz9v1alt1 9a1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5 mmbz10valt1 10a 6.5 0.3 9.50 10 10.5 1.0 14.2 1.7 7.5 (v f = 1.1 v max @ i f = 200 ma) 40 watts breakdown voltage v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts na min nom max ma v a mv/ c mmbz12valt1 12a 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 mmbz15valt1 15a 12 50 14.25 15 15.75 1.0 21 1.9 12.3 mmbz18valt1 18a 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 mmbz20valt1 20a 17 50 19.00 20 21.00 1.0 28 1.4 17.2 mmbz27valt1 27a 22 50 25.65 27 28.35 1.0 40 1.0 24.3 mmbz33valt1 33a 26 50 31.35 33 34.65 1.0 46 0.87 30.4 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) , with the ac frequency = 1.0 khz. 6. surge current waveform per figure 5. and derate per figure 6.
mmbz5v6alt1 series http://onsemi.com 4 typical characteristics -40 +50 18 breakdown voltage (volts) figure 1. typical breakdown voltage versus temperature (upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 0 temperature ( c) +100 +150 15 12 9 6 3 0 (v br @ i t ) -40 +25 1000 figure 2. typical leakage current versus temperature temperature ( c) +85 +125 100 10 1 0.1 0.01 i r (na) figure 3. typical capacitance versus bias voltage (upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. steady state power derating curve p d , power dissipation (mw) temperature ( c) fr-5 board alumina substrate 01 23 320 280 240 160 120 40 0 c, capacitance (pf) bias (v) 200 80 15 v 5.6 v
mmbz5v6alt1 series http://onsemi.com 5 typical characteristics p 0.1 1 10 100 1000 1 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 c bidirectional pk peak surge power (w) mmbz5v6alt1 figure 5. pulse waveform value (%) 100 50 0 01 2 34 t, time (ms) figure 6. pulse derating curve pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value- i pp 2 t p t r 10 s peak value-i pp 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) figure 7. maximum nonrepetitive surge power, p pk versus pw peak pulse derating in % of peak power or current @ t a = 25 c figure 8. maximum nonrepetitive surge power, p pk (nom) versus pw 0.1 1 10 100 1000 1 10 100 pw, pulse width (ms) p pk peak surge power (w) unidirectional rectangular waveform, t a = 25 c bidirectional mmbz5v6alt1 power is defined as v z (nom) x i z (pk) where v z (nom) is the nominal zener voltage measured at the low test current used for voltage classification. unidirectional
mmbz5v6alt1 series http://onsemi.com 6 typical common anode applications a quad junction common anode design in a sot23 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. two simplified examples of tvs applications are illustrated below. mmbz5v6alt1 thru mmbz33valt1 keyboard terminal printer etc. functional decoder i/o a mmbz5v6alt1 thru mmbz33valt1 gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmbz5v6alt1 thru mmbz33valt1
mmbz5v6alt1 series http://onsemi.com 7 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c = 225 milliwatts 556 c/w the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
mmbz5v6alt1 series http://onsemi.com 8 24 & 40 watts peak power transient voltage suppressors surface mount style 12: pin 1. cathode 2. cathode 3. anode sot23 to236ab case 31808 issue af d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmbz5v6alt1/d thermal clad is a trademark of the bergquist company north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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